تابعنا:

US8049862B2 - Indium tin oxide (ITO - Google Patents - US Patent for Laminated diffractive optical element and ...

US5171401A US07/533,232 US53323290A US5171401A US 5171401 A US5171401 A US 5171401A US 53323290 A US53323290 A US 53323290A US 5171401 A US5171401 A US 5171401A Authority US United States Prior art keywords ito plasma etching argon tin oxide Prior art date Legal status (The legal status is an assumption and is not a legal conclusion.October 1 - The United States patent office issues a patent for "Method of Forming a Gasket of Indium and Braid." ... Indium Corporation develops indium inorganic compounds, including: indium oxide, indium-tin oxide, indium chloride, and indium hydroxide. 1950s. 1959.

اقرأ أكثر

US6331240B1 - Tin-indium alloy - Google Patents - Method for manufacturing indium-tin-iron catalyst for use ...

Indium Corporation Expert Receives SMTA Award November 2, 2021. Indium Corporation's Ron Lasky, Ph.D., PE, senior technologist, was presented with the Surface Mount Technology Association's (SMTA) Member of Technical Distinction Award following a recognition dinner during SMTA International on Monday, Nov. 1 in Minneapolis, Minn., U.S. "SMTA is the best …摘要: Suspensions and powders based on indium tin oxide are prepared by a method in which indium tin oxide precursors are precipitated from solutions in one or more solvents in the presence of one or more surface-modifying components, the solvent(s) are removed from the precipitate, which is then calcined, one or more surface-modifying components and one or more solvents are …

اقرأ أكثر

Milestones | Media Center |Indium Corporation - Method for manufacturing transparent conductive indium-tin ...

A layer of material, such as crystalline indium tin oxide (ITO), is formed on top of a substrate by heating the material to a high temperature, while a temperature increase of the substrate is limited such that the temperature of the substrate does not exceed a predetermined temperature. For example, a layer including amorphous ITO can be deposited on top of the substrate, and the amorphous ...A method for manufacturing an indium-tin-iron catalyst that is used to obtain carbon nanocoils that have an external diameter of 1000 nm or less, the method comprising a first process that forms an organic solution by mixing an indium-containing organic compound and a tin-containing organic compound with an organic solvent, a second process that forms an organic film by coating a substrate ...

اقرأ أكثر

Patent application for innovative film - possible Indium - Indium Tin Oxide - an overview | ScienceDirect Topics

European Patent EP2737530 . Kind Code: B1 ... 10.1039/c1jm10514k PARK Y T ET AL: "Fast switching electrochromism from colloidal indium tin oxide in tungstate-based thin film assemblies", ELECTROCHIMICA ACTA, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 55, no. 9, 30 March 2010 (), pages 3257-3267, XP026924571, ...1 Indium Tin Oxide (ITO) Coated Glass Market Overview 1.1 Product Overview and Scope of Indium Tin Oxide (ITO) Coated Glass 1.2 Indium Tin Oxide (ITO) Coated Glass Segment by Type 1.2.1 Global Indium Tin Oxide (ITO) Coated Glass Market Size Growth Rate Analysis by Type 2021 VS 2027 1.2.2 Glass Thickness:0.4mm 1.2.3 Glass Thickness:0.7mm

اقرأ أكثر

Indium gallium nitride-based ohmic contact layers for - Indium Corporation Expert Receives SMTA Award | Indium ...

reduction of indium oxide to indium metal in molecular 20 hydrogen requires temperatures in excess of380 degrees C. to achieve a reasonable reaction rate. These high temperatures are often not compatible with the types of devices that are typically hybridized. The prior art suggests that indium tin oxide (ITO) can beUS2649368A US189045A US18904550A US2649368A US 2649368 A US2649368 A US 2649368A US 189045 A US189045 A US 189045A US 18904550 A US18904550 A US 18904550A US 2649368 A US2649368 A US 2649368A Authority US United States Prior art keywords bismuth indium tin alloy alloys cadmium Prior art date Legal status (The legal status is an assumption and is not a …

اقرأ أكثر

Recovery of lead, tin and indium from alloy wire scrap - US5171401A - Plasma etching indium tin oxide - Google Patents

1. A multiple-pane insulating glazing unit having a between-pane space and two opposed external pane surfaces, a desired one of the two external pane surfaces bearing a coating comprising both a first indium tin oxide film and a second indium tin oxide film, the second indium tin oxide film being located over the first indium tin oxide film, the second indium tin oxide film being in contact ...The behavior during creep in shear of eutectic indium-tin joints on copper and nickel substrates was examined in order to determine the effect of creep deformation on the microstructure of the alloy. Primary creep was absent in all the samples tested. The stress exponent at …

اقرأ أكثر

Synthesis and application of non-agglomerated ITO - Global and China Indium Tin Oxide (ITO) Sputtering Targets ...

Indium tin oxide (ITO) thin film is a highly degenerate n-type semiconductor which has a low electrical resistivity of 2 – 4.3 x 10-24 Ω-cm [Alam and Cameroon, 2000]. The low resistivity value of ITO films is due to a high carrier * Corresponding author : . 1 Department of Physics, University of Dhaka, Dhaka-1000 ...A laminated diffractive optical element includes a first resin layer having a first lattice shape and a second resin layer having a second lattice shape. The first resin layer and the second resin layer are laminated in this order on a first substrate so that the lattice shapes oppose each other. The first resin layer contains a resin and transparent conductive particles.

اقرأ أكثر

Atomic layer epitaxy of hematite on indium tin oxide for - Global Indium Tin Oxide (ITO) Coated Glass Market Research ...

Indium-tin oxide (ITO) layer and method for producing the same. United States Patent 6849165. Abstract: A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 μΩcm and a small surface roughness of preferably less than 1 nm on a substrate, wherein ...Indium Tin Oxide. ITO films deposited on glass substrates by magnetron sputtering technique, under different temperatures, below 200°C were found to have band gap energy in the range from 4.1 to 4.4 eV depending on the growth conditions (temperature, oxygen concentration) (Mudryi et al., 2007). From: Reference Module in Materials Science and ...

اقرأ أكثر

Indium Corporation's Durafuse™ LT Receives Electronics - Patent Pick: Lauder Rides the Infrared Wave with Indium ...

US-2003178752-A1 chemical patent summary.On Nov. 5, Iroh filed a provisional patent application with the U.S. Patent Office for a polymer-based film with remarkable properties. The film is highly transparent and electrically conductive.

اقرأ أكثر

C22B 58 - Obtaining gallium or indium - Patents Sitemap - Microstructure and creep of eutectic indium/tin on copper ...

Indium-tin mixed oxide powder which consists of primary particle aggregates and contains 50 to 90% by weight indium oxide, calculated as In203, and 10 to 50% by weight tin oxide, calculated as SnO2. It is produced by atomising a solution of an inorganic indium compound and an organic tin compound and burning it in a flame. It may be used for the production of electrically conductive paints and ...Jang et al. "Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p-In0.15Ga0.85N/p-GaN layer" Journal of Applied Physics 101(1):013711-4 (2007). (APP,APP) Google Patents

اقرأ أكثر

Chemical Information Profile for Indium Tin Oxide - Future Foldable OLED Displays will Replace Indium Tin ...

An etch method includes providing a material layer consisting essentially of a group member selected from the group consisting of an indium oxide (InO), a tin oxide (SnO), a mixture of indium and tin oxides, a compound of indium and of tin and of oxygen having the general formulation In.sub.x Sn.sub.y O.sub.z where z is substantially greater than zero but less than and where …A method for applying a transparent, conductive indium-tin oxide coating on a substrate of amorphous, hydrogen-containing silicon wherein an unheated substrate of amorphous hydrogen-containing silicon is treated with sources of indium and tin in a first stage while maintaining a low partial pressure of oxygen until a partial coating is built-up, then reducing the oxygen partial pressure in the ...

اقرأ أكثر

US Patent for Dry-etching of indium and tin oxides Patent - Chapter 1.10 - Miscellaneous Etchants

Currently, indium is used in a wide range of electric and electronic applications. The amount of indium consumed is largely a function of worldwide liquid crystal display (LCD) production 2. The increase of LCD-panel products has enhanced the demand of transparent electrodes from indium tin …A tin/indium alloy plating solution not containing any cyanide and serving as a substitute for tin/lead alloy plating is provided. The tin/indium alloy plating solution is a weakly alkaline aqueous solution for tin/indium alloy electroplating, prepared by adding, as metal salts, a tetravalent tin salt of metastannic acid and a trivalent indium salt of an organosulfonic acid, further adding a ...

اقرأ أكثر

Indium oxide powder, method for preparing the same, and - US2649368A - Indium-bismuth-tin alloy - Google Patents

indium oxide and tin oxide powders are blended together then compacted by hot or cold isostatic pressing or by sintering to make ITO sputtering targets (compressed blocks of ITO powder). ITO may be formed directly during a coating process, e.g., reactive sputtering from indium-tin alloy targets in the presence of oxygen.The global Indium Tin Oxide (ITO) market was valued at 2759.25 Million USD in 2020 and will grow with a CAGR of 4.89% from 2020 to 2027. …

اقرأ أكثر

Indium-tin oxide (ITO) layer and method for producing the - Surface-Modified Indium-Tin Oxides - DEGUSSA AG

Fig. 1 is a flow chart of the processes used for recovery of lead, tin and indium from their scrap. The sample was leached in 5 M HCl solution containing 0.6 ml of 1:1 HNO 3 /g scrap at 80°C for 1.45 h. The HCl:scrap stoichiometric ratio was 2.5 (10 ml/g) as mentioned before .A 71.8% segment of the lead content was precipitated as PbCl 2 on cooling the solution down to 10°C.1. Surface-modified indium-tin oxides, characterised by. 2. Process for producing the surface-modified indium-tin oxides according to claim 1, characterised in that the oxides are sprayed with the surface-modifying agent whilst being mixed and the mixture is then heat treated at a temperature of 50 to 400° C. for a period of 1 to 6 hours.

اقرأ أكثر